Domestic SiC Device Validated in Orbit, Boosting Efficiency and Power for Future Missions

China's First Domestically Produced High-Voltage Radiation-Resistant Silicon Carbide Power Device Completes Space Validation

A significant milestone has been achieved in China's space exploration endeavors with the successful completion of space validation and in-orbit application of the country's first domestically produced high-voltage radiation-resistant silicon carbide (SiC) power device. This advancement promises to revolutionize space power systems, paving the way for more efficient and powerful missions.

The SiC payload, a collaborative effort between the Institute of Microelectronics of the Chinese Academy of Sciences (CAS) and the Technology and Engineering Center for Space Utilization of the CAS, was launched aboard the Tianzhou-8 cargo spacecraft in November 2024. Since then, it has undergone rigorous in-orbit testing, demonstrating exceptional performance.

Compared to traditional silicon-based power devices, the SiC power device boasts a remarkable efficiency increase, jumping from 85% to 95%. Additionally, its power-to-volume ratio has improved fivefold, signifying a significant leap in space power technology.

This breakthrough holds immense potential for future space missions, including lunar exploration, manned lunar landing, and deep space exploration. The SiC power device will serve as the backbone of upgraded space power systems, providing the necessary power and efficiency for these ambitious endeavors.

The successful development and application of this domestically produced SiC power device mark a significant step forward for China's space program. It underscores the country's commitment to technological innovation and its pursuit of becoming a leading force in space exploration.